The advanced thin film deposition and characterization facility aims to develop the chemical science associated with chemically tailored and chemically patterned thin film growth aimed at 21st century materials. The facility is designed for basic research on the chemistry associated with thin film growth of the focus materials, such as high dielectrics, copper barrier and metal gates. The facility comprises a linked set of growth and analysis tools. For film growth, tools are included for (1) metal-organic chemical vapor deposition, (2) inert gas sputter deposition, (3) reactive plasma deposition. and (4) plasma enhanced chemical vapor deposition. For film analysis, tools are included for (1) ellipsometry and (2) X-ray photoelectron chemical spectroscopy. The proposed facility is unique in that these tools will be integrated so that rapid in vacuo sample transfer among them is routine. Consequently, the chemical and physical properties of films, particularly heterostructures and interface chemistry, grown using multiple tools, precursors, temperatures and pressures, can be evaluated at selected steps without compromising the subsequent growth steps.

While the facility is integrated, each tool can be operated independently. Thus, multiple experiments can be simultaneously underway. While this feature requires careful management, it permits efficient utilization of the costly tools involved.

The ATFDC Facility is comprised of three instruments:

Dual Chemical Vapor Deposition system with gas phase and direct liquid injection delivery for multilayer structure deposition. Remote microwave plasma for low temperature growth. Sample Stage RF Biasing For Reactive Sputtering Deposition and Plasma Etching. Sample biasing for post-growth plasma treatment.

X-ray Photoelectron Spectroscopy with non-destructive depth profile capability for ultrathin film analysis. Ion Scattering Spectroscopy for top surface analysis. Argon Sputtering Gun for depth profile of multilayer structures.

High Vacuum Chamber with Load Lock Sample Entry. Three Sputtering Guns with DC and RF Power Supplies. Sample Stage RF Biasing For Reactive Sputtering Deposition and Plasma Etching. Sample Stage Heating up to 500 C.